Material and device considerations for HEMT LSI

MBE growth and fabrication process technologies for realizing high performance and high yield HEMT LSI circuits are described. The mobility was as high as 2.4×10
⁶
cm
²
/V.s at 4.2K. The high uniform epitaxial layer has been grown on 3"
^φ
wafer with low surface defect density. The effect of (DX) center in AlGaAs layer has been reduced by using new heterostructure. Threshold voltage (Vth) has been well controlled and uniform over the wafer and wafer to wafer. Ion implantation technology has been applied for the purpose of the isolation and reduction of series resistance. These high performance technologies make the HEMT very suitable for LSI application.