Evaluation of LDD MOSFET's based on hot-electron-induced degradation

Hot-electron-induced device degradation in LDD MOSFET's is thoroughly studied. Conventional ways to characterize device degradation, i.e., threshold shift and transconductance reduction, are not suitable for LDD MOSFET's due to the nature of degradation in such devices. Using a current-drive degradation criterion, it is shown that LDD MOSFET's have little net advantage over conventional MOSFET's in terms of hot-electron-induced long-term degradation.