Vertical n-p-n bipolar transistors fabricated on buried oxide SOI

Vertical n-p-n bipolar transistors have been fabricated in silicon-on-insulator (SOI) films prepared by buried oxide implantation. Electrical device characteristics are shown to be comparable to those obtained on devices fabricated in bulk silicon, indicating no significant degradation owing to the buried oxide layer. Dielectric isolation in excess of 10
¹¹
Ω.cm and µ 3 × 10
⁶
V/cm is measured.