Characteristics of an all-implanted p+-n-n+solar cell

This work presents the main electrooptical parameters of a p
⁺
-n-n
⁺
single-crystalline silicon solar cell, whose front p
⁺
-n junction and the backside n-n
⁺
contact were fabricated through masked ion implantation of boron (
¹¹
B+) and phosphorus (
³¹
p+), respectively. The distinctive feature of the cells consists of the use of the front junction silicon dioxide mask as an AR layer in the finished devices.