Silicon Schottky-barrier modification by ion-implantation damage

Low-energy (5-keV) high-dose (10
¹⁵
cm
^-2
) argon implantation has been carried out on n- and p-type silicon to confirm the role of ion damage on the characteristics of subsequently formed Schottky barrier diodes. The electrical behavior of the diodes is similar to that observed recently on inert-gas ion-etched and reactive-ion-etched silicon surfaces, thus unambiguously attributing the Schottky-barrier modification to ion-induced surface damage.