A numerical analysis of a short vertical n+-n--n+GaAs MESFET

A half-micrometer channel-length n
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-n
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-n
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GaAs MESFET is simulated numerically using a drift-diffusion description of electronic transport. Recently published experimental results [3], [4] show high pinchoff voltage and high transconductance. The computer simulations ascribe these values to injections of carriers into the channel.