A 2—18-GHz monolithic distributed amplifier using dual-gate GaAs FET's

This paper describes a 2-18-GHz monolithic distributed amplifier with over 6-dB gain, ± 0.5-dB gain flatness, and less than 2.0:1 VSWR. Measured noise figure is below 7.5 dB, and power output capability is greater than 17 dBm, The amplifier is designed with dual-gate GaAs FET's instead of single-gate FET's for maximum gain over the design bandwidth. Cascaded amplifier performance will also be presented.