DC magnetic field effects on a real space transfer heterojunction oscillator

The effect of a dc magnetic field on the voltage threshold of a Al
x
Ga
1-x
As/GaAs heterojunction oscillator wherein the applied voltage is parallel to the junction layers is shown to have different characteristics than a correspondingly biased Gunn oscillator. In particular, for one orientation of the magnetic field where the Lorentz force is directed from the GaAs to the Al
x
Ga
1-x
As layer, the threshold voltage can be decreased and the power output of the oscillator increased in contrast to Gunn behavior. These experiments strongly support reverse real space electron transfer by hot electrons as the dominant oscillator process.