Breakdown voltage optimization of silicon p-π-v planar junction diodes

Design considerations for optimizing the high-voltage capability of a planar silicon p-π-ν diode structure are studied by computer-aided numerical similation. The effect of varying the π-region width and doping concentration are investigated. An optimum field plate design is determined. The reduction of breakdown voltage due to Q
ss
is calculated. Accurate avalanche breakdown prediction is accomplished by solving the Poisson charge and electron and hole current continuity equations. The values found are a few percent smaller than those obtained by only solving the Poisson equation and then calculating the ionization integral. Discrepancies with previously reported avalanche breakdown calculations and measured data are discussed.