Moderate inversion in SOI MOSFET's with grain boundaries

Our previous model for the effects of grain boundaries on the strong-inversion (linear region) conductance of silicon-on-insulator (SOI) MOSFET's is extended to account for moderate inversion. The extension, which is supported by measurements of laser-recrystallized devices, predicts a nearly exponential dependence for the conductance on the (front) gate voltage that is controlled by the grain boundaries.