All-binary AlAs—GaAs laser diode

Thin layers of AlAs and GaAs, grown by molecular beam epitaxy (MBE), are used to simulate the properties of Al
x
Ga
1-x
As. These AlAs-GaAs superlattices (SL's) are used as cladding layers (instead of Al
x
Ga
1-x
As) in heterostructure lasers capable of room-temperature operation. It is thus possible to obtain laser diodes which are composed only of the binary compounds GaAs and AlAs. The all-binary lasers are compared to conventional Al
x
Ga
1-x
As-GaAs double-heterostructure (DH) lasers grown and fabricated under similar conditions.