Temperature behavior of bright luminescence from LPE-grown Ga1-xAlxP structures

Luminescent properties of LPE-grown Ga
1-x
Al
x
P (
0 \leq x \geq 0.3
) structures have been studied over a wide temperature range. The complicated character of low-temperature luminescence is attributed to intrinsic and impurity-related recombination. The essential dependence of free exciton recombination upon temperature and composition is established for radiative Ga
1-x
Al
x
P structures. Anomalous and normal dependence of radiative efficiency on temperature has been shown to be characteristic of intrinsic and impurity-related luminescence. Thus the temperature dependence of the total luminescence can be controlled simply by varying the donor impurity doping level. LED's with luminous intensity
I_{V}= 2
mcd at
T = 300
K have been fabricated from the LPE-grown Ga
1-x
Al
x
P p-n structures which have high temperature stability of injection and breakdown luminescence efficiency, and emission band spectral position.