0.15 µm Channel-length MOSFETs fabricated using e-beam lithography

We have fabricated MOSFETs with channel lengths as short as 0.1 µm by a modified NMOS process. The devices have been designed according to parameters obtained from numerical simulation. Electron-beam lithography has been used to define patterns at all levels with the negative resist GMC in a tri-level configuration. Heat treatments have been as short as possible to preserve very shallow source-drain junction depths (<0.1µm). We observe quasi-long channel behavior for low bias voltages. Measured values for the transconductance are among the highest ever reported. For a channel length
L = 0.14
µm, we obtain g
m
= 180 mS/mm for a gate oxide thickness of 160 Å.