A p-i-n heterojunction model for the thin-film CuInSe2/CdS solar cell

By treating the high-resistivity CdS and CuInSe
2
layers in high efficiency cells as insulating, a simple p-i-n model results that predicts the behavior seen in these cells. The relatively low open-circuit voltage and the diode factor are both directly related to the width of the insulating CdS layer. Substantial improvements in both V
oc
and fill factor can be expected if the width of this CdS layer can be reduced.