Highly linear GaAs hall devices fabricated by ion implantation

Gallium arsenide Hall devices have been fabricated with very thin active layers formed by silicon implantation. The variation of Hall voltage with calibrated magnetic-flux density shows that the linearity error is better than ±0.03 percent in the magnetic-flux-density range below 10 kG at room temperature. Measurements in a superconducting magnet at 4.2 K shows that the linearity error is within ± 0.6 percent at the range below 68 kG. When this device is used as a magnetic sensor, magnetic-flux meters with an accuracy of 0.1 percent (
B
< 10 kG) at room temperature and 0.6 percent (
B
< 68 kG) at 4.2 K can be achieved.