One-dimensional analysis of reverse recovery and dv/dt triggering characteristics for a thyristor

Reverse recovery and
dv/dt
triggering characteristics of a thyristor are analyzed using a one-dimensional numerical model, which consists of the solutions of the full set of semiconductor device equations, including the effect of the shorted emitter. The calculated waveforms of the anode voltage and current are in good agreement with the experimental ones. The reverse recovery characteristic is discussed for the case of an inductive load, and the dependence of capacitive and resistive components of the space-charge region on residual carriers in the n base is discussed on the basis of carrier distributions. Also, the role of the shorted emitter on
dv/dt
triggering is investigated in connection with the rates of supply and removal of carriers in the p base. It is shown that the shorted emitter improves
dv/dt
capability by causing not only a reduction in the injection efficiency of the n emitter, but also rapid turn-off of the n-p-n transistor section of a thyristor.