"The use, characterization, and reliability implications of vacuum deposited silicon nitride as a capacitor dielectric in integrated circuits"

This work discusses the implementation, characterization, and reliability aspects of a vacuum deposited silicon nitride film used as a capacitor dielectric in integrated circuits. Capacitors with silicon dioxide, silicon nitride (Si
3
N
4
), and silicon dioxide/ silicon nitride sandwich were fabricated using processing techniques compatible with linear integrated circuit manufacture. Failure rates before and after bias-temperature stressing were compared. Defect densities, breakdown, dielectric constant, leakage, and dissipation factor data will be presented.