Low-loss p-i-n diode for high-power MIC phase shifter

Low-loss p-i-n diodes designed for installation in an MIC 3-bit F-band phase shifter have been fabricated from bulk-grown silicon wafers with deep-diffused contact layers. The breakdown potential of these diodes exceeds 1000 V. The p-i-n diodes have a series resistance of 0.24 Ω at a forward current of 50 mA and have a
Q
of 800 at -40-V bias. Each diode in a 180° bit phase shifter can handle 3.5-kW peak power. The 3-bit
F
-band phase shifter constructed with six p-i-n diodes can sustain 5-kW peak power (50-µs pulse, 0.8-percent duty cycle). The phase shifter has an average loss of 1 dB under 50-mA forward bias and -40-V reverse bias.