Millimeter-wave GaAs read IMPATT diodes

We have designed, fabricated, and evaluated gallium arsenide Read IMPATT diodes for K
a
-band (36-38 GHz)operation. The devices were packaged units intended for manufacturability and high yield. Oscillator output power as high as 710-mW CW was obtained at 9-percent efficiency. This paper describes design and fabrication techniques employed and discusses the potential and limitations of such devices.