MM-Wave pin switching diode fabrication using silicon molecular beam epitaxy

A Molecular Beam Epitaxial (MBE) system was used to grow both lightly doped n and p silicon epitaxy on heavily doped n
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substrates. An epitaxial grown p-n junction was formed in the latter material. The high quality of the epitaxy and its practical application was demonstrated by the successful fabrication of millimeter-wave switching diodes.