Improvement of thyristor turn-on by calculation of the gate-cathode characteristic before injection

The ohmic part of the gate-cathode characteristic of thyristors has been calculated numerically. Normal and amplifying gate structures as well as emitter shorts are included. By a simple extension of the model, the case of the dv/dt and breakover turn-on has also been treated. It is thus possible to calculate the minimal control current and voltage for a cathode side thyristor geometry and to optimize the device with respect to the turn-on process.