Noise temperature in silicon in the hot electron region

The noise temperature as a function of the applied field has been measured on an epitaxial silicon layer at the frequencies 2 GHz and 4 GHz. It has been found that the experimental results are in good agreement with the theory given by Moll. It is shown that for noise calculations in silicon field-effect transistors with pronounced carrier velocity saturation the noise temperature T
n
versus field E may be approximated by
T_{n}/T_{0}
= 1 + γ
(E/E_{c})^{2}
with T
0
= lattice temperature, E
c
= saturation field, γ = const.