MOS transistors and integrated circuits with plasma-grown aluminum oxide

Various studies have been carried out to determine whether SiO
2
could be replaced by improved insulators in MOS structures and integrated circuits. These studies have been directed toward improving device performance and reducing the requirements for the "ultra clean" technology presently employed. In this paper we report on MOS transistors and integrated circuits fabricated using plasma grown Al
2
O
3
. The aluminum oxide is formed by depositing an aluminium film on a fresly cleaned silicon substrate and then anodizing in an oxygen plasma. All other steps in device fabrication use standard silicon technology.