Surface states and 1/f noise in MOS transistors

Surface-state density in n-channel MOS transistors operating in the inversion mode has been determined from the channel conductance and related to 1/
f
noise in these devices. It has been found that the noise is proportional to the surface-state density at the Fermi level. The surface orientation and temperature affect the noise output only indirectly, through their influence on the surface-state density and the position of the Fermi level at the surface.