OMVPE growth of Ga/sub 1-x/In/sub x/As/InP (0.53

The optimization of the growth temperature in organometallic vapor phase epitaxy (OMVPE) for unstrained Ga/sub 0.47/In/sub 0.53/As/InP quantum wells (QWs) to realize atomically flat heterointerfaces and excellent optical qualities is described. GaInAs/InP QWs with narrow photoluminescence linewidths at 4.2 K have been grown at an optimal growth temperature of around 620 degrees C. It is shown that strained-layer Ga/sub 1-x/In/sub x/As/InP (0.53>