1.55 mu m laser on [110] InP by GSMBE

The realization of standard heterojunction and multiple quantum well (MQW) 1.55- mu m lasers in the GaInAsP system grown by gas source molecular beam epitaxy (GSMBE) on [110] InP is discussed. It is shown that high-performance transmitters suitable for the polarization scrambling scheme can be achieved by integrating, on the same substrate, lasers and efficient polarization modulators.<
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