Novel InP-channel HEMTs grown by organometallic vapor phase epitaxy

The growth and fabrication of high performance InP-channel HEMTs with transconductances as high as 335 mS/mm, low output conductances of 6 mS/mm, and high terminal breakdown voltages are discussed. It is shown that the AlInAs HEMTs have microwave gains as high as 8 dB at 30 GHz with f/sub T/ and f/sub max/ of 38 and 97 GHz. The device operate as power HEMTs at 18 GHz and exhibit power outputs of 0.34 W/mm and efficiencies of 26%. The results and estimated maximum achievable power output of 1.3 W/mm demonstrate the potential of the AlInAs/InP HEMT for power microwave applications.<
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