0.13um 32Mb/64Mb embedded DRAM core with high efficient redundancy and enhanced testability

This paper describes the 32Mb and the 64Mb embedded DRAM core with high efficient redundancy, which is fabricated using 0.13µm triple-well 4-level Cu embedded DRAM technology. The core size of 18.9mm
²
and the cell efficiency of 51.3% for the 32Mb capacity, the core size of 33.4mm
²
and the cell efficiency of 58.1% for the 64Mb capacity are realized. This core can be achieved 230MHz burst access at 1.0V power supply condition adopting data bus architecture merged shift column redundancy. We implemented 4 test functions to improve the testability of embedded DRAM core. It realizes DRAM core test in a logic test environment.