Novel high performance SPDT power switches using multi-gate FET's

The development of a 16-watt single-pole double throw (SPDT) MESFET based switch is presented. The switch is unique in its use of a multi-gate FET device which can be fabricated on a standard production switch process. The power handling is nine times that of a single FET while occupying only 30% more die area. The device's bandwidth is comparable to that of a single FET while insertion loss is minimized using a novel N-plus (N+) intergate layer. A switch using the multi-gate device has achieved 0.4 dB insertion loss and 40 dB of isolation at L-band.<
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