Ku-band super low-noise pseudomorphic heterojunction field-effect transistors (HJFET) with high producibility and high reliability

The authors report newly developed Ku-band super-low-noise pseudomorphic heterojunction FETs (HJFETs) with high producibility and high reliability, utilizing a novel electron beam lithography technique. The developed HJFETs with 0.25 mu m long and 200 mu m wide gate FETs showed an average noise figure of 0.6 dB with 11.3 dB average associated gain at 12 GHz and exhibited highly reliable operation with a mean time to failure of 3*10/sup 9/ hours at 100 degrees C.<
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