An autonomous SRAM with on-chip sensors in an 80nm double stacked cell technology

An active solution to overcome the uncertainty and fluctuation in nano technology SRAM is introduced. It automatically adapts SRAM's operation optimized for the process variation and operating environments by using on-chip timer, temperature sensor, substrate noise manager and leakage current monitor. A test SRAM chip fabricated with an 80nm SRAM process, shows that average power consumption is reduced by 9%, and the standard deviation decreases by 58%.