90nm toggle MRAM array with 0.29/spl mu/m/sup 2/ cells

A 90nm magnetoresistive random access memory (MRAM) based on the toggle switching mode has been successfully demonstrated for the first time in a 90nm CMOS process. The MRAM memory cell is based on a 1-transistor 1-magnetic tunnel junction (1T1MTJ) with 0.29/spl mu/m/sup 2/bit cell. The results of the 4k bit array demonstrate scalability of MRAM to 90nm technology.