Improvement in NBTI by catalytic-CVD silicon nitride for hp-65nm technology

To improve NBTI of pMOSFETs for hp-65nm technology node and beyond, low temperature catalytic CVD (Cat-CVD) formed SiN was applied to liner film in PMD and gate-sidewall formed. We found that N-H bond in the cat-CVD SiN is enough stable to affect the NBTI while the amount of Si-H bond needed to be reduced, which can be achieved by higher catalyst temperature. The liner and sidewall application improved the NBTI lifetime of two and one orders of magnitude respectively comparing a low temperature LP-CVD SiN using hexa-chloride-disilane (HCD).