A method to study uniformity of electric properties of high-resistance CdZnTe crystals

The paper discusses about the electric properties of high-resistance CdZnTe crystals. The suggested method detects large-scale irregularities of various origins in high-resistance semiconductors. Grain boundaries and high-conductivity regions are easily revealed in Cd/sub 1-x/Zn/sub x/Te crystals. It was found that certain electric irregularities invisible by transmitted IR light are attributed to intrinsic structural defects.