The effect of Cl-doping concentration on the resistivity of polycrystalline CdZnTe:Cl thick film

Polycrystalline CdZnTe thick films were grown by thermal evaporation method using CdZnTe and CdZnTe:Cl source. We obtained polycrystalline CdZnTe thick films having high resistivity (5times10
⁹
Omegamiddotcm) similar that of single crystals. Cl-doped polycrystalline CdZnTe thick films(Cl: 100, 200, 300, 400 ppm) were prepared on polished graphite substrate keeping substrate temperature between 350~500 degC. The average grain size and resistivity are similar each other. This paper present the effect of Cl-doping on the resistivity of polycrystalline CdZnTe thick films.