A sub-1V bandgap reference circuit using subthreshold current

A bandgap reference circuit employing subthreshold current is proposed. Only a small fraction of V/sub BE/ is utilized to generate the reference voltage of 170 mV. Since the subthreshold current of MOSFET is used as the current source, the circuit only consumes 2.4 /spl mu/W at supply voltage of 1V. It was fabricated using 0.18 /spl mu/m CMOS triple-well technology on chip area of 0.029 mm/sup 2/. Both the measurement and the simulation demonstrate the reference voltage variation is 1.3mV from -20/spl deg/C to 100/spl deg/C and is 1.1mV per volt for supply voltage from 0.95V to 2.5V.