A new switching architecture for MRAM: local field switching

A new switching architecture for MRAM is proposed without D/L (digit line) current that uses a local magnetic field generated directly by the current flowing from bottom electrode (BE) to MTJ (magnetic tunnelling junction) cell. The local field switching is totally different from the current-driven switching since it uses the magnetic field generated by the BE current, not the spin transfer torque in the free layer of the MTJ. The MTJ cells shows that magnetoresistance ratio is 23% at 0.1 V bias voltage. It is effectively switched around 0.5 V. The current directions are irrelevant with switching. This result shows that the local field switching can be directly applied to the high selective MRAM array without disturbing neighbor cells.