Defect characterization in silicon particle detectors irradiated with Li ions

High energy physics experiments at future very high luminosity colliders will require ultra radiation-hard silicon detectors, able to withstand fast hadron fluences up to 10
¹⁶
cm
^-2
. In order to test the detectors' radiation hardness in this fluence range, long irradiation times are required at the currently available proton irradiation facilities. Energetic (58 MeV) lithium ions, with experimental hardness factor about two orders of magnitude higher than 24 GeV protons for 280-300 mum thick detectors, could represent a promising alternative radiation source. In this study, the degradation mechanisms in single pad p
⁺
-n standard float zone (STFZ) and diffusion oxygenated float zone (DOFZ) Si detectors irradiated with Li ions up to the fluence of 2.9times10
¹²
Li/cm
²
have been investigated by means of photo induced current transient spectroscopy and thermally stimulated currents. Results are compared with the radiation damage induced by 24 GeV proton, 1 MeV neutron and
⁶⁰
Co gamma-ray irradiation in order to compare the radiation hardness of STFZ and DOFZ Si under different beams with different energies.