Measurement of the charge collection efficiency after heavy non-uniform irradiation in BaBar silicon detectors

We have investigated the depletion voltage changes, the leakage current increase and the charge collection efficiency of a silicon microstrip detector identical to those used in the inner layers of the BaBar silicon vertex tracker (SVT) after heavy non-uniform irradiation. A full SVT module with the front-end electronics connected has been irradiated with a 0.9 GeV electron beam up to a peak fluence of 3.5 /spl times/ 10/sup 14/ e/sup -//cm/sup 2/, well beyond the level causing substrate type inversion. We irradiated one of the two sensors composing the module with a non-uniform profile with /spl sigma/=1.4 mm that simulates the conditions encountered in the BaBar experiment by the modules intersecting the horizontal machine plane. The position dependence of the charge collection properties and the depletion voltage have been investigated in detail using a 1060 nm LED and an innovative measuring technique based only on the digital output of the chip.