A new device model of VDMOSFET for SPICE simulations

The authors present a novel SPICE model for VDMOSFET which is based on analytical expressions for I-V and C-V characteristics of the device. The device model parameters were extracted from measured I-V and C-V characteristics of Siliconix VNDU 12 and DC52 VDMOSFETs. The model has been incorporated in the source code of SPICE3C1 which runs on IBM PC or compatible. Simulations using this model agree well with experimental data for both DC and transient responses. The model can be used in the simulation and design of switching power supplies and other circuits which use power MOSFETs.<
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