Euv system optimization and advanced lithography research at Lawrence Berkeley National Laboratory

Worldwide, the focus of developmental EUV lithography has shifted to higher NA, higher resolution tools such as the 0.3-NA Micro Exposure Tool (MET). Diffractionlimited EUV optical systems, operating at 13.5-nm wavelength with 0.3-NA, have a Rayleigh resolution of 27-nm, and can print features as small as 12 nm under special illumination conditions.