X-band fully depleted SOI Amplifier with adaptive bias control

A 10-GHz amplifier with an adaptive bias control circuit is realized using fully depleted SOI CMOS technology. The effective gate bias of the amplifier MOSFET adjusts itself based on the power level of the input signal. Measured results showed reduction of overall power consumption and wider range of output power near its peak efficiency. At absence of the signal, the amplifier can be automatically switched to a standby mode with approximately 85% reduction of power consumption. Power saving is also demonstrated for pulsed signal modulated at 10 MHz.