Effect of heavier doped junction side on efficiency of Si IMPATT diodes

For n- and p-type Si IMPATT diodes, the effect of the doping profile of the heavier doped junction side was calculated in terms of the dc-to-RF efficiency. In p-type diodes, the electric field existing within this region leads to a decrease in efficiency. This effect is assumed to be one reason why the theoretically expected high efficiencies of these diodes have not been obtained experimentally.