Ion-implanted double-drift Ka-band diodes

The application of a doubly charged boron (
¹¹
B
⁺²
) beam to the formation of p-type drift regions in symmetrical K
a
-band double-drift silicon IMPATT diodes is discussed. Devices fabricated with these implanted impurity distributions exhibited output powers ∼1.2 W with 10-percent conversion efficiencies over the frequency range of 29 to 39 GHz.