The influence of diffusion on the stability of the supercritical transferred electron amplifier

The influence of the diffusion coefficient-electric field characteristic on the stability of the supercritical n-GaAs transferred electron amplifier (TEA) with ohmic contacts is investigated in computer simulations. Typical effects of doping profile, bias voltage, and temperature are considered. For a 10-µm 5-Ω TEA, a negative input conductance in the 7-31- GHz range is computed along with a corresponding 37-GHz voltage gain 3-dB bandwidth product in a 50-Ω circuit.