L-band high power silicon p-i-n diode switch

An extremely high power silicon p-i-n diode switch was developed for operation over the 1255- to 1385-MHz frequency range. It was successfully tested at 4-MW peak power with 100-µs pulsewidth. and 2.5-MW peak and 100-kW average power with 200-µs pulsewidth in a balanced duplexer configuration.