Microwave oscillation in AlxGa1-xAs avalanche diodes

Microwave oscillations in a new III-V compound, Al
x
Ga
1-x
As, have been observed. The material has a high energy gap and hence a potential for high power devices. Peak power outputs of 2.64 watts at 11.34 GHz with an efficiency of 1 percent were obtained in samples with low aluminum contents. There is evidence of high internal resistance in the present samples which may be the cause of low efficiency. Heating effect during pulse and mode jump in oscillation are also observed.