Reduction of the storage time of a transistor using a Schottky-barrier diode

A composite transistor consisting of a conventional transistor and a Schottky-barrier diode is proposed which has a very short saturation time constant τ
s0
. The measured τ
s0
of the composite transistor is reduced to ∼10 to 50 percent of that of the original transistor and is 1 ns at best.