Highly reliable 1.3-/spl mu/m InGaAlAs buried heterostructure laser diode for 10 GbE

We fabricated an in-situ-cleaned and regrown 1.3-/spl mu/m InGaAlAs buried heterostructure laser. The average degradation of its driving current was about 1% after a 3000-hour aging test. This result offers the logical conclusion that in-situ cleaning is a promising means of fabricating highly reliable, high-performance InGaAlAs BH lasers.