2 /spl mu/m InAsSb quantum-dot lasers

High-density InAsSb quantum dots (QD) have been grown on [001] InP substrates using metalorganic vapor phase epitaxy. Photoluminescence shows the QDs emit light in the range of 1.7-2.2 /spl mu/m at room temperature, and at 2 /spl mu/m the QDs have luminescence 3 times stronger than that of InAs QDs. Narrow ridge lasers based on a single-stack InAsSb QDs were demonstrated near 2 /spl mu/m in cw operation at room temperature with a threshold current density of 730 A/cm/sup 2/, output power of 3 mW/facet and a differential quantum efficiency of 13%.